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An Entity of Type : prov:Entity, within Data Space : webisadb.webdatacommons.org associated with source dataset(s)

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  • depositing an insulating layer over a structure comprising a transistor gate and a sidewall spacer adjacent to said transistor gate under conditions sufficient to fill spaces on an integrated circuit having an aspect ratio of at least 8:1, said insulating layer comprising silicon dioxide and a level of phosphorous dopant, said conditions including a concentration of said phosphorous dopant. 2.
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