A process as defined in claim 1 wherein the hydrosilicon compound is represented by the formula: R' SiO(R' SiO) (RI-ISiO) SiR wherein R is a saturated monovalent hydrocarbon group, x has any average value from 0 to about 10,000, y has any average value from 1 to about 10,000 and the ratio of x to y is from 700:1 to 1:700. 3.