programmingUS7826263 *Feb 27, 2007Nov 2, 2010Samsung Electronics Co., Ltd.Memory system including flash memory and method of operating the sameUS20030046631 *Apr 22, 2002Mar 6, 2003Steffen GappischError correction scheme for use in flash memory allowing bit alterability* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS8615702 *Sep 20, 2011Dec 24, 2013Samsung