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  • Apr 2013Cree, Inc.Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating sameUS848137620 Jan 20119 Jul 2013Cree, Inc.Group III nitride semiconductor devices with silicon nitride layers and methods of manufacturing such devicesUS852523011 Oct 20103 Sep 2013The Regents Of The University Of CaliforniaField-effect transistor with compositionally gr
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