Specifically, FIGS. 1A and 1B show a structure that includes substrate 10 having a patterned stack comprising a semiconductor body region, i.e., Fin, 12, and hard mask 14 present atop substrate 10. [0025] The substrate includes upper portion 10 u which is comprised of an insulating material such as an oxide, nitride, oxynitride or multilayers thereof, and bottom portion 10 b which is comprised of