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  • 2H5N, C2H6S, C2H6S2, C3H6S, SiH4, B2H6, Si2H6, SiH2Cl2, and PH3. [0159] Hydrogen-generating CRISP techniques using catalyzing-reactant combinations such as SiH4/F2, B2H6/F2, or PH3/F2 are also useful for removing residual oxygen, nitrogen, carbon, tin, lead, aluminum, sulfur, selenium, and other elements that have volatile hydrides from a surface of a semiconductor.
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