FIGS. 12A to 12C show fuses in a semiconductor device according to the third embodiment of the present invention, in which FIG. 12a is a top view partly cut to show parts positions, FIG. 12B is a sectional view taken along a line I???I of FIG. 12A, and FIG. 12C is a sectional view taken along a line II???II of FIG. 12A. An opening 4 is formed in a polyimide film 1 and a passivation film 7.