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  • With reference to FIG. 5, a semiconductor die 510 is produced from a silicon wafer 500 that contains at least one of the SSOI active areas 134, 234, 334, and 434, respectively, such as are depicted in FIGS. 1F, 2B, 3B, 4C, and 4E. A die 510 is an individual pattern, typically rectangular, on a substrate such as substrate 110, substrate 210, substrate 310, or substrate 410 that contains circuitry t
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