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  • With reference again to FIG. 3, other processes for depositing a DARC film 24 of SixOyN:H upon a semiconductor device structure 14 that are known in the art, such as CVD, electron cyclotron resonance (ECR) PECVD, and bias ECR PECVD processes, may also be employed in accordance with the DARC film fabrication method of the present invention.
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