prov:value
| - In the first step, a work film 12 is formed on a semiconductor wafer 11, as shown in FIG. 3A. The material of the work film 2 includes, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a spin-on glass, a silicon-based insulating film such as a blank material used in the manufacture of a mask, a silicon-based material such as amorphous silicon, polycrystalline s
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