prov:value
| - In the method of forming a contact-hole of the present invention, in place of the metal silicide layer made of WSix, there may be used a metal silicide layer made of silicon and a metal such as titanium (Ti), molybdenum (Mo), tantalum (Ta), vanadium (V), chromium (Cr), cobalt (Co), nickel (Ni), zirconium (Zr), niobium (Nb), rhodium (Rh), palladium (Pd), hafnium (Hf), platinum (Pt), manganese (Mn),
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