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  • In a memory device, such as DRAM or SRAM, various layers are deposited to form structures, such as PMOS gates, NMOS gates, memory cells, P+...http://www.google.com/patents/US7141511?utm_source=gb-gplus-sharePatent US7141511 - Method and apparatus for fabricating a memory device with a dielectric etch stop layerAdvanced Patent SearchPublication numberUS7141511 B2Publication typeGrantApplication num
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