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  • n under gate trenches thereof and related methods of forming such devicesUS8432012Mar 18, 2011Apr 30, 2013Cree, Inc.Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating sameUS8492827Mar 15, 2011Jul 23, 2013Cree, Inc.Vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistorsUS8536066May 10, 2010Sep 17, 2013Cree, In
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