21, 2012Intel CorporationTransistor having an etch stop layer including a metal compound that is selectively formed over a metal gateUS8399317Oct 14, 2011Mar 19, 2013Intel CorporationTransistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor* Cited by examinerClassifications U.S. Classification438/761, 257/E21.577, 257/E21.259,