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  • 012Intel CorporationTransistor having an etch stop layer including a metal compound that is selectively formed over a metal gateUS8299546 *Mar 25, 2010Oct 30, 2012International Business Machines CorporationSemiconductor devices with vertical extensions for lateral scalingUS8399317Oct 14, 2011Mar 19, 2013Intel CorporationTransistor having an etch stop layer including a metal compound that is select
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