In one embodiment of the invention described in U.S. Pat. No. 5,009,920 to Lee (incorporated by reference above), where the interconnecting layer is deposited by plasma enhanced chemical vapor deposition (PECVD) a starting reactant (tyically in the form of M???R wherein M denotes a metal atom and R denotes an organic compound or hydrogen), an inert gas such as helium, argon, neon, xenon and krypto