prov:value
| - In preparation of the aforementioned substrate 800, the seed substrate 801 may be made of any material such as C-plane sapphire, M-plane sapphire, A-plane sapphire, R-plane sapphire, GaAs, ZnO, MgO, spinel, Ge, Si, 6H???SiC, 4H???SiC or 3C???SiC. Any of a GaN layer, an AlN layer, an AlxGa1-xN (0<x<1) layer or an InyGa1-yN (0<y???1) layer grown at a relatively low temperature of 450??? C. to 600???
|