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  • nitride MOS device gate electrodeUS4579812 *Feb 3, 1984Apr 1, 1986Advanced Micro Devices, Inc.Process for forming slots of different types in self-aligned relationship using a latent image maskUS4593454 *Nov 20, 1984Jun 10, 1986Societe pour d'Etude et la Fabrication de Circuits Integres Speciaux EFCSProcess for manufacturing an integrated circuit with tantalum silicide connections utilizing self-
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