prov:value
| - In FIG. 15, for example, MOS (metal oxide semiconductor) DRAM according to the present invention comprises: a first clock generator 1 for generating clocks, for example A, RAS, AE, etc.; a second clock generator 2A for generating clocks, for example, ??B, ??C, ??L, ALE, etc. to activate a row address; a third clock generator 2B for generating clocks to control read/write operations for a column ad
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