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  • In general, the seed layer will be deposited onto an underlying barrier layer, which may contain materials such as Ti, Nb, Mo, Ta, TaN, W, WN, TiN, TaSiN, WSiN, TiAlN, TiSiN. The seed layer may be deposited by reactive or non-reactive sputtering from a single alloy target or from multiple targets, by ionized sputtering which directs ionized species to the substrate, by chemical vapor deposition, b
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