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  • Firstly, as illustrated in FIG. 2 (a), the gate lines 1, the common line 3, and the first electric-field-shielding electrodes 11 are formed using a photomechanical technology and a fine processing technology, after transparent conducting films or a multi-layer film including those films made of metals such as ITO, metals such as Cr, Al, Ti, Mo, W, Ni, Cu, Au, and Ag, or alloys including those meta
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