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  • Cree, Inc.Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devicesUS8432012Mar 18, 2011Apr 30, 2013Cree, Inc.Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating sameUS8481376Jan 20, 2011Jul 9, 2013Cree, Inc.Group III nitride semiconductor devices with silicon nitride layers and meth
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