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  • r 16, 2010Apr 9, 2013Cree, Inc.Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devicesUS8432012Mar 18, 2011Apr 30, 2013Cree, Inc.Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating sameUS8460977 *Dec 28, 2011Jun 11, 2013Cree, Inc.Mesa termination structures for power semiconductor
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