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  • 9, 2013Cree, Inc.Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devicesUS8432012Mar 18, 2011Apr 30, 2013Cree, Inc.Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating sameUS8470672 *Aug 30, 2011Jun 25, 2013Denso CorporationMethod of manufacturing silicon carbide semiconductor devic
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