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  • Preferably in the high resistance inorganic hole injecting and transporting layer, an oxide of a metal or metalloid such as silicon or germanium is used as the main component, and at least one of metals, metalloids, and/or oxides, carbides, nitrides, silicides and borides thereof, having a work function of at least 4.5 eV, preferably 4.5 to 6 eV, is contained therein to create conduction paths, th
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