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  • The semiconductor device according to claim 1, wherein the high-dielectric-constant material is a material including at least one selected from a group of aluminum oxide, lithium oxide, beryllium oxide, magnesium oxide, calcium oxide, strontium oxide, scandium oxide, yttrium oxide, lanthanum oxide, thorium oxide, uranium dioxide, zirconium oxide, hafnium oxide, praseodymium oxide, and neodymium ox
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