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| - The method for fabricating a semiconductor device according to claim 6, wherein the high-dielectric-constant material is a material including at least one selected from a group of aluminum oxide, lithium oxide, beryllium oxide, magnesium oxide, calcium oxide, strontium oxide, scandium oxide, yttrium oxide, lanthanum oxide, thorium oxide, uranium dioxide, zirconium oxide, hafnium oxide, praseodymiu
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