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  • The ion-etching is performed at a constant value of ion-beam current density and an increased partial pressure of oxygen or other suitable gas in the specimen...http://www.google.com/patents/US4101772?utm_source=gb-gplus-sharePatent US4101772 - Ion-beam etching method and an apparatus thereforAdvanced Patent SearchPublication numberUS4101772 APublication typeGrantApplication numberUS 05/759,870Pub
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