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  • Thereafter, a gate insulating film is formed of a silicon nitride (SiNx) and other materials, an active semiconductor layer is formed of amorphous silicon and other materials, and a low resistance semiconductor layer is formed of amorphous silicon and other materials doped with, for example, phosphor, all by CVD. Then, metal films (e.g. Al/Ti) are stacked by sputtering to form data signal lines (s
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