The openings 36, 38 and 40 are then filled with a conductive material, i.e. doped polysilicon or tungsten, and then planarized back to the surface 42 of the insulating material layer 34. [0048] As shown in FIG. 3, a diffusion barrier/fuse/resistor material of a refractory metal-silicon-nitrogen is then deposited and patterned into a diffusion barrier 44, a fuse 46 and a high resistance resistor 48