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  • The gate conductor layer can be composed of metals such as manganese (Mn), niobium (Nb), aluminum (Al), tantalum (Ta), molybdenum (Mo), zircon (Zr), titanium (Ti), palladium (Pd), rhenium (Re), iridium (Ir), platinum (Pt), tungsten (W), titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN) or alloys thereof, formed by physical vapor deposition (PVD), chemical vapor deposition (CVD)
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