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  • The pattern transfer and etching of the mask layer may use one or more etching steps to selectively remove the unprotected portions of the oxide layers 94, 80, including a dry etching process such as reactive-ion etching, ionbeam etching, plasma etching or laser etching, a wet etching process wherein a chemical etchant is employed or any combination thereof.The opening 96 is used to define and dif
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