prov:value
| - The source gases used were silane (SiH4, Si2 H6, Si3 H8, Si4 H4) as amorphous silicon film forming material, H2 and rare gas as base gas, SiF4 as fluorine introducing gas, B2 H6, PH3, AsH3 as n-type controlling gas, N2, NH3 as nitrogen doping gas, N2 O, NO as oxygen doping gas, hydrocarbon such as CH4, C2 H4 as carbon doping material and other gases known as being doped by the plasma CVD, mixed in
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