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  • The fifth dielectric layer 125A layer also covers vertical sidewalls of the select gate 119 B2 and the storage device formed by the storage gate 119 B1, the etched fourth dielectric layer 117B, and the floating gate 115B. The fifth dielectric layer 125A may be selected from materials such as an oxynitride or ONO. The plan view of FIG. 1F has delineation noting conformal ridges in the fifth dielect
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