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  • Plasma-assisted processes that the present invention can improve include high-rate reactive-ion etching (RIE) of polysilicon, aluminum, oxides, and polyimides; plasma-enhanced chemical-vapor deposition (PECVD) of dielectrics, aluminum, and other materials; low-temperature metal-organic chemical-vapor deposition (MOCVD) of metals including aluminum and copper; low-temperature dielectric chemical-va
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