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  • Suitable etch stop materials include for example, silicon oxynitride (SiON), tungsten (W), polysilicon, or other material having a higher etch selectivity to insulative layer 216 and a higher CMP rate to layer 311; and the etch stop layer has a thickness, for example, in a range about 200 ??? to about 3000 ???, usually about 1000 ???.
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