prov:value
| - Those skilled in the art will thus appreciate that the use of dopant sources, such as, but not limited to, phosphine (PH3), silicon tetrafluoride (SiF4), Ge compounds such as tetramethyl and tetraethyl germanium, nitrogen, ammonia, methane, ethylene, acetylene, and B2 H6, for deposition of these other films is within the scope of this invention.
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