ectrode (8, 80) comprises at least one of Al, Ti, an alloy including Al, and an alloy including Ti.III. In the decision, the examining division reasoned essentially as follows:Main requestClaim 1 of the main request no longer specifies an i-layer of i-type gallium nitride compound semiconductor doped with a p-type impurity, as in the preamble of the claims 1, 4 and 6 as filed, but only a first