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  • The gate electrodes 7 are composed of a stacked structure of n-type or p-type polysilicon to which phosphorus, arsenic, or boron are heavily added or Wsi (tungsten silicide) and polysilicon, or a stacked structure of NiSi, MoSi, TiSi, CoSi, or the like and polysilicon, or a stacked structure of such metal as Al or W and polysilicon.
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