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  • electrically conductive layer that has improved compatibility with high-dielectric constant dielectric materials; heating ruthenium oxideUS20020048880Aug 8, 2001Apr 25, 2002Joo-Won LeeMethod of manufacturing a semiconductor device including metal contact and capacitorUS20020052097May 3, 2001May 2, 2002Park Young-HoonApparatus and method for depositing thin film on wafer using atomic layer depositi
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