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  • Before or after the source/drain implant, sidewall spacers 15 are created, as also seen in FIG. 1b, by first depositing a conformal coating of silicon oxide then etching by a method such as reactive ion etch to uniformly remove a given amount of silicon oxide to leave the sidewall spacers 15 where the thickness is greater; this etch removes all of the exposed conformal oxide from the remainder of
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