For example, silicon-containing diamond-like carbon (SiDLC), a DLC analogue with 5-10% C replacement by Si, has a much higher resistance to oxygen-based reactive ion etching (RIE) than unmodified DLC. Fluorinated diamond like carbon (FDLC or a--C:F:H), a DLC analogue in which some or most of the H is replaced by F, has lower stresses than DLC as well as a lower dielectric constant (k<2.8).