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  • In one or more embodiments, the halo implantation for the NMOS FinFET structure 201 can include doping halo regions 258 with a p-type dopant such as boron (B) using an ion implantation at a dose of approximately 5???1013 atoms/cm2 to form an p-type doping concentration of approximately 2???1018 atoms/cm3 to a depth of approximately 35 nm.
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