The gate electrode layer 112 may be formed of one or more of doped poly-silicon and/or a metal, such as tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), cobalt (Co), nickel (Ni) and/or a conductive metal nitride (such as TiN or WN) and/or metal silicide (such as WSi or CoSi or NiSi or TiSi) thereof.