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  • 130 avr. 2013Cree, Inc.Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating sameUS849282715 mars 201123 juil. 2013Cree, Inc.Vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistorsUS853606610 mai 201017 sept. 2013Cree, Inc.Methods of forming SiC MOSFETs with high inversion layer mobilityUS854178715 juil. 200924
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