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  • Patent US4761464 - Interrupted polysilanes useful as photoresists - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More ??Sign inAdvanced Patent SearchPatentsPolysilane polymers in which the Si backbone is interrupted by atoms such as O, Ge, Sn, P, etc., are useful photoresists especially in the solvent development mode....http://www.google.com/patents/US4761464?utm_source=gb-gplus
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