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  • 22 (a)) and wirings on the surface layer of a poly-Si layer 14 with a thickness of 50???100 nm and with a controlled crystal grain size, by forming a monocrystalline Si TFT section 15 b (See FIG. 22 (b)) and any of or both of semiconductor devices and semiconductor for integrated circuits such as diodes, resistors, capacitors and coils, as a peripheral circuit unit on the monocrystalline Si layer
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