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  • g 22, 2006Micron Technology, Inc.System and device including a barrier layerUS7245010Aug 9, 2005Jul 17, 2007Micron Technology, Inc.System and device including a barrier layerUS7535047Aug 20, 2004May 19, 2009Micron Technology, Inc.Semiconductor device containing an ultra thin dielectric film or dielectric layerUS20120149195 *Aug 25, 2011Jun 14, 2012Kabushiki Kaisha ToshibaMethod for manufacturing i
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