g through the contact etch stop layer 22 to form closedcommunication with (contact) the IGD layer 20 and contact via openings 28B and 28C are formed to form closed communication with (contact) the metal silicide portions 24A and 24B. The contact openings are then backfilled (e.g., deposited and planarized)with a conductive material such as aluminum or tungsten, preferably tungsten, by conventional