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  • In the providing step, the suitable wafers may comprise, but are not limited to, silicon, thick SOI, thin SOI, silicon substrate layer with an SiGeC etch stop layer, GaAs, GaAs substrate with an etch stop layer, InP, In As, InGaAs, InSb, GaSb, ZnO, sapphire, and any other material on which electronic structures may be fabricated.
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